The laboratory facility and testing methods memristor structures

N. Permiakov, Alexander Ivanov, Vyacheslav Moshnikov
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Abstract

Recent advances in information technology require higher-speed and higher-density memory devices. Testing and development of the technology of these devices is a complex task. The paper presents the option of using an electron microscope and setup for measuring electrical parameters.
介绍了忆阻器结构的实验室设备和测试方法
信息技术的最新进展要求更高速度和更高密度的存储设备。测试和开发这些设备的技术是一项复杂的任务。本文介绍了使用电子显微镜和装置测量电参数的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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