A New Method for Verification of MOSFET Models Based on Device Parameter Variations

Abstract

Statistical variation of the threshold voltage is calculated for both NMOS surface channel and PMOS buried channel devices based on the variation of channel doping. This derivation offers a method for verifying MOSFET parameter models. The -models for the buried channel by S.M.Sze [1], Van der Tol [2] and F.M.Klaassen [3] are tested with the clear result that the model of Klaassen is to be preferred to those of the other research groups.