Metamorphic GaAs/AlAs Bragg mirrors deposited on InP for 1.3/1.55 /spl mu/m vertical cavity losers

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI:10.1109/LEOSST.1997.619100

L. Goldstein, C. Fortin, P. Salet, A. Plais, J. Jacquet, A. Rocher, C. Poussou

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Abstract

Long wavelength (1.3/1.5 /spl mu/m) GaAs-GaAlAs vertical cavity surface emitting lasers (VCSEL) with Bragg mirror (GaAs/AlAs) wafer fused on InP substrate exhibits low threshold current and cw operation at room temperature. However the wafer fusion technique requires additional substrate, epitaxy and technological steps. Furthermore the wafer fusion is difficult to achieve on a full 2 inches substrate. A new approach is proposed which consists in the metamorphic growth of GaAs-AlAs Bragg mirrors on InP by gas source molecular beam epitaxy.

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在InP上沉积了1.3/1.55 /spl mu/m垂直空腔损耗的变质GaAs/AlAs Bragg反射镜

长波长(1.3/1.5 /spl mu/m) GaAs- gaalas垂直腔面发射激光器(VCSEL)在InP衬底上熔接布拉格反射镜(GaAs/AlAs)晶圆，具有低阈值电流和室温连续波工作特性。然而，晶圆融合技术需要额外的衬底、外延和技术步骤。此外，晶圆融合很难在2英寸的衬底上实现。提出了一种利用气体源分子束外延在InP上实现GaAs-AlAs Bragg反射镜变质生长的新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application

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