{"title":"Nonlinear absorption in silicon at mid infrared wavelengths","authors":"V. Raghunathan, R. Shori, O. Stafsudd, B. Jalali","doi":"10.1109/GROUP4.2006.1708195","DOIUrl":null,"url":null,"abstract":"We report measurements of nonlinear absorption in mid-IR wavelengths. The absence of nonlinear losses beyond the two-photon bandedge combined with high Raman gain, thermal conductivity and damage threshold renders silicon an excellent mid-IR Raman crystal.","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"3rd IEEE International Conference on Group IV Photonics, 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2006.1708195","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report measurements of nonlinear absorption in mid-IR wavelengths. The absence of nonlinear losses beyond the two-photon bandedge combined with high Raman gain, thermal conductivity and damage threshold renders silicon an excellent mid-IR Raman crystal.