Characterization and Modeling of Harmonics in SOI Poly-Silicon Resistors

V. Ruparelia, A. Praveen Paul
{"title":"Characterization and Modeling of Harmonics in SOI Poly-Silicon Resistors","authors":"V. Ruparelia, A. Praveen Paul","doi":"10.1109/imarc49196.2021.9714628","DOIUrl":null,"url":null,"abstract":"This paper presents the various causes of nonlinearities in poly-Silicon resistor: The study in this paper confirms that the most dominant source of 3rd Harmonics in poly-resistors is self-heating. We have also briefly discussed the various self-heating models available and proposed an updated model based on Rth -Cth thermal network. Finally the model to hardware correlation of the 3rd harmonic output power is shown, which highlights that the proposed self-heating model provides the best matching with the hardware results, when compared to the other available models, without compromising the accuracy of other parts of the model.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper presents the various causes of nonlinearities in poly-Silicon resistor: The study in this paper confirms that the most dominant source of 3rd Harmonics in poly-resistors is self-heating. We have also briefly discussed the various self-heating models available and proposed an updated model based on Rth -Cth thermal network. Finally the model to hardware correlation of the 3rd harmonic output power is shown, which highlights that the proposed self-heating model provides the best matching with the hardware results, when compared to the other available models, without compromising the accuracy of other parts of the model.
SOI多晶硅电阻器谐波的表征与建模
本文介绍了引起多晶硅电阻器非线性的各种原因:本文的研究证实了多晶硅电阻器中三次谐波的最主要来源是自热。我们还简要讨论了现有的各种自热模型,并提出了一种基于Rth -Cth热网的更新模型。最后给出了三次谐波输出功率的硬件相关性模型,结果表明,与其他可用模型相比,所提出的自加热模型在不影响模型其他部分精度的情况下,与硬件结果匹配最好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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