Mach-Zehnder Modulators Monolithically Integrated with Fabry-Perot Laser Diodes in GaAs/AIGaAs Using Impurity-Free Vacancy Disordering

A. Helmy, B. Ooi, F. Camacho, A. C. Bryce, J. Aitchison, Richard M. De La Rue, J. Marsh
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引用次数: 0

Abstract

Direct modulation of laser diodes can reach frequencies as high as 33 GHz1 sacrificing, however, other performance aspects such as operating power, optical loss, linewidth, and chirp. A better approach is to use external interferometric modulators, which can provide lower insertion losses than electroabsorption modulators,2 and also allow the chirp level to be engineered to suit the associated optical link. Although integration is feasible using etch and regrowth techniques to realise the material composition variation required between the laser and the modulator, such techniques have major limitations.3 An alternative, more elegant, solution has become feasible due to recent advances in the process of quantum well intermixing (QWI).
利用无杂质空位无序将马赫-曾德调制器与法布里-珀罗激光二极管单片集成在GaAs/AIGaAs中
激光二极管的直接调制可以达到高达33ghz1的频率,但牺牲了其他性能方面,如工作功率、光损耗、线宽和啁啾。一种更好的方法是使用外部干涉调制器,它可以提供比电吸收调制器更低的插入损耗2,并且还允许设计啁啾电平以适应相关的光链路。虽然集成是可行的,使用蚀刻和再生技术来实现激光和调制器之间所需的材料成分变化,但这种技术有很大的局限性由于量子阱混合(QWI)过程的最新进展,一种更优雅的替代解决方案已经变得可行。
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