Design of Split Oxide TFT with Large Size for GOA Circuit

2019 IEEE 2nd International Conference on Electronics Technology (ICET) Pub Date : 2019-05-10 DOI:10.1109/ELTECH.2019.8839316

Yan Xue, Baixiang Han, Gary Chaw, Congwei Liao, Shengdong Zhang, Yuan-chun Wu

引用次数: 0

Abstract

A type of stable and high performance top-gate amorphous-indium-gallium-zinc-oxide (a-IGZO) TFT has been developed by using split active oxide semiconductor. The performance and the stabilization of split-TFT has been systematically studied. Finally, this split-TFT structure is placed in an 18T1C gate driver on array (GOA) circuit to testify the function.

查看原文本刊更多论文

用于GOA电路的大尺寸氧化分裂TFT的设计

利用分裂活性氧化物半导体，研制了一种稳定、高性能的顶栅非晶铟镓锌氧化物(A - igzo) TFT。系统地研究了劈裂式tft的性能和稳定性。最后，将该分体tft结构置于18T1C栅极驱动阵列(GOA)电路中以验证其功能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 IEEE 2nd International Conference on Electronics Technology (ICET)

自引率

0.00%

发文量