A 150nW 32 kHz mobility-compensated relaxation oscillator with +/−30ppm/°C temperature stability

A. W. Zomagboguelou, C. Galup-Montoro, M. C. Schneider
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引用次数: 6

Abstract

A relaxation oscillator is presented that makes use of a current-mode Schmitt trigger to reduce the effects of process, voltage and temperature (PVT) variations. A detailed analysis of the oscillator, including the temperature performance, is presented and verified by experimental results. A test chip with a typical frequency of 32 kHz was fabricated in a 0.18 μm standard CMOS process. The measured frequency variations were +/- 30 ppm/°C for temperature variation from -20 °C to 80°C and +/- 500 ppm/V for supply voltage variation from 0.7 V to 1.8 V. The short term stability is 66 ppm (2 ns) of jitter while the long term stability is 500 ppm of Allan deviation after 10 seconds. A careful design results in a total area of 0.1 mm2 and a power consumption of 150 nW.
150nW 32 kHz迁移率补偿弛豫振荡器+/ - 30ppm/°C温度稳定性
提出了一种利用电流型施密特触发器降低工艺、电压和温度(PVT)变化影响的弛豫振荡器。详细分析了振荡器的温度性能,并通过实验结果进行了验证。采用0.18 μm标准CMOS工艺制作了典型频率为32 kHz的测试芯片。当温度从-20°C到80°C变化时,测量到的频率变化为+/- 30 ppm/°C,电源电压从0.7 V到1.8 V变化时,测量到的频率变化为+/- 500 ppm/V。短期稳定性为66 ppm (2 ns)的抖动,而长期稳定性为500 ppm的艾伦偏差后10秒。经过精心设计,总面积为0.1 mm2,功耗为150 nW。
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