Voltage conditioning effect on CuCr contacts

S. Lagotzky, H. Schellekens, A. Papillon, G. Muller
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Abstract

A dc field emission scanning microscope (FESM) was used to characterize the electron emission current of CuCr25 sintered contacts. Field emission scans at 20-50 MV/m using a truncated cone anode of 300 μm in diameter localized emitting defects with a positioning accuracy of ~150 μm in the measured area (~25 mm2) of the contact. The strongest activation of emitters was noticed at 30-40 MV/m resulting in 15 emitters at 50 MV/m. Afterwards, the I(E)-characteristic of the 10 dominant emission sites was measured locally. Two different types of emission could be observed: a normal Fowler-Nordheim-like emission where the current depends only on the applied voltage, and an abnormal emission where the current shows a strong hysteresis between the rising voltage branch and the decreasing voltage branch. The abnormal behavior can lead to an emission current increase once a critical electric field is exceeded. Possible surface effects influencing the emission current are either open pores or dielectric inclusions at the grain boundaries. The field emission enhancement factor β of these sites vary from 115 to 300 similar to values reported before. The number density of emitters is well above 0.5/mm2. In sealed vacuum interrupters only one emitter is active at a specific moment in time, shadowing the other emitters.
CuCr触点的电压调节效应
采用直流场发射扫描显微镜(FESM)对CuCr25烧结触头的电子发射电流进行了表征。采用直径为300 μm的截锥阳极进行20 ~ 50 MV/m的场发射扫描,在接触面被测区域(~25 mm2)定位精度为~150 μm的发射缺陷。发射体在30-40 MV/m时激活最强,在50 MV/m时产生15个发射体。然后,局部测量了10个主要排放点的I(E)-特征。可以观察到两种不同类型的发射:一种是正常的Fowler-Nordheim-like发射,其中电流仅取决于施加的电压;另一种是异常发射,其中电流在上升电压支路和下降电压支路之间表现出很强的滞后。一旦超过临界电场,异常行为会导致发射电流增加。影响发射电流的可能的表面效应是晶界上的开孔或介电包裹体。这些地点的场发射增强因子β在115 ~ 300之间变化,与以前报道的值相似。发射体的数量密度远高于0.5/mm2。在密封真空灭流器中,只有一个发射极在某一特定时刻处于活动状态,遮蔽其他发射极。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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