Brillouin Lasers Based On 11 Million-Q On-Chip Chalcogenide Resonators Without Direct Etch Process

Sangyoon Han, Dae-Gon Kim, Joonhyuk Hwang, In Hwan Do, Dongin Jeong, Yong-Hee Dee, D. Choi, Hansuek Lee
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Abstract

We have experimentally demonstrated on-chip chalcogenide resonators with Q-factor of 1.1x107 using a new fabrication method which avoids direct etching of chalcogenide film. Low threshold power (12mW) Brillouin laser is implemented using the fabrication method. Also, cascaded lasing up to 3rd stokes have been observed with 42 mW of pump power.
基于无直接蚀刻工艺的1100万q片上硫化物谐振器的布里渊激光器
我们用一种避免直接刻蚀硫系薄膜的新方法,实验证明了q因子为1.1x107的片上硫系谐振器。采用该方法实现了低阈值功率(12mW)布里渊激光器。此外,在42兆瓦的泵功率下,还观察到级联激光高达3斯托克。
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