A 4 a peak current and 2 ns pulse width CMOS laser diode driver for high measurement rate applications

J. Nissinen, J. Kostamovaara
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引用次数: 13

Abstract

A single chip integrated laser diode driver has been designed and fabricated in a high-voltage 0.35μm 50V CMOS technology for pulsed time-of-flight (TOF) laser ranging applications. A peak current and pulse width of approximately 4 A and 2ns, respectively, can be achieved through a low ohmic load in a driver structure with four parallel switching devices. With a commercial pulsed laser diode a peak optical power of 2.3 W with a pulse width of 1.5 ns was measured. Measurements showed also that a pulsing rate of at least 1 MHz is achievable. With this pulse rate the current consumption from 5.5 V and 50 V supplies is 9 mA and 5 mA, respectively.
一个4 A峰值电流和2 ns脉冲宽度CMOS激光二极管驱动器用于高测量速率的应用
采用高压0.35μm 50V CMOS技术,设计并制作了用于脉冲飞行时间(TOF)激光测距的单片集成激光二极管驱动器。在具有四个并联开关器件的驱动结构中,通过低欧姆负载可以实现峰值电流和脉冲宽度分别约为4 A和2ns。用商用脉冲激光二极管测量到的峰值光功率为2.3 W,脉宽为1.5 ns。测量还表明,脉冲速率至少为1mhz是可以实现的。在此脉冲速率下,5.5 V和50 V电源的电流消耗分别为9 mA和5 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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