Step-controlled epitaxial growth of SiC and its conductivity control

Abstract

Polytype-controlled epitaxial growth of SiC is achieved by utilizing step-flow growth on off-oriented SiC(0001) substrates. High-quality of SiC epilayers has been elucidated through photoluminescence, Hall effect, and deep level analyses. The background doping level of undoped epilayers can be reduced down to 0.5/spl sim/2/spl times/10/sup 14/ cm/sup -3/. In-situ n- and p-type impurity doping from the 10/sup 15/ to 10/sup 19/cm/sup -3/ range has been realized. In ion implantation of nitrogen donors and aluminum/boron acceptors, high-temperature annealing is a key issue to obtain nearly perfect electrical activation. Vanadium ion implantation can successfully be applied to form semi-insulating SiC layers.