The impact of modeling the overshooting effect in subthreshold region for Nanoscale CMOS inverter

Abstract

Some aspects should be considered in Nanoscale MOSFETS models, such as power dissipation, channel length modulation, and the overshooting effect. In this paper we study the impact of considering the overshooting effect in a previous nanoscale model, by including the subthreshold region where the overshooting effect appears. Results show a positive impact of modeling the overshooting effect on the output transient response accuracy compared to HSPICE.