High CW power 0.8 /spl mu/m-band Al-free active-region diode lasers

Abstract

100 /spl mu/m-wide stripe, Al-free, uncoated, 0.83 /spl mu/m diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20/spl deg/C. The active region consists of a 150 /spl Aring/ In/sub 0.09/Ga/sub 0.91/As/sub 0.8/Pb/sub 0.2/ quantum well surrounded by 0.4 /spl mu/m In/sub 0.5/Ga/sub 0.5/P confining layers and 1.5 /spl mu/m In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm/sup 2/ and threshold-current characteristic temperature, T/sub 0/, as high as 160 K.