The dual-gate MOS controlled thyristor with current saturation capability

Abstract

A new power device structure that combines the characteristics of the MCT and the IGBT is described. The dual-gate MCT behaves as an IGBT or an MCT depending upon the bias applied to one of the gates. Devices with 700 V blocking capability were fabricated and experimentally demonstrated to exhibit low on-state voltage drop in the MCT mode and good FBSOA characteristics in the IGBT mode. Measured on-state voltage drops of 1.5 V were obtained for the thyristor mode with a turn-off time of 15 /spl mu/s. The device transits from the thyristor mode to the IGBT mode in 6 /spl mu/s. No lifetime killing technique was used to control the turn-off time for these devices.