{"title":"Circuit model of UTC-PD with high power and enhanced bandwidth technique","authors":"Senjuti Khanra, A. Barman","doi":"10.1109/NUSOD.2014.6935371","DOIUrl":null,"url":null,"abstract":"An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"99 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935371","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.