Kriging-Assisted Ultra-Fast Simulated-Annealing Optimization of a Clamped Bitline Sense Amplifier

Oghenekarho Okobiah, S. Mohanty, E. Kougianos, Oleg Garitselov
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引用次数: 14

Abstract

Simulations using SPICE provide accurate design exploration but consume a considerable amount of time and can be infeasible for large circuits. The continued technology scaling requires that more circuit parameters are accounted for along with the process variation effects. Regression models have been widely researched and while they present an acceptable accuracy for simulation purposes, they fail to account for the strong correlation effect between parameters on the design. This paper presents an ultra-fast design-optimization flow that combines correlation-aware Kriging metamodels and a simulated annealing algorithm that operates on them. The Kriging-based method generates metamodels of a clamped bit line sense amplifier circuit which take into account the effects of correlation among the design and process parameters. A simulated annealing based optimization algorithm is used to optimize the circuit through the Kriging metamodel. The results show that the Kriging metamodels are very accurate with very low error. The optimization algorithm finds an optimized precharge time while keeping power consumption as constraint in an average execution time of 2.78 ms, as compared to a 45 minutes for an exhaustive search of the design space, i.e. close to 106× faster. To the best of the authors' knowledge this is the first paper that uses Kriging and simulated annealing for nano-CMOS design.
箝位位线感测放大器的kriging辅助超快速模拟退火优化
使用SPICE的模拟提供了精确的设计探索,但消耗了相当多的时间,并且对于大型电路来说是不可行的。随着工艺规模的不断扩大,需要考虑更多的电路参数以及工艺变化的影响。回归模型已经得到了广泛的研究,虽然它们为模拟目的提供了可接受的精度,但它们无法解释参数之间对设计的强相关性影响。本文提出了一种超快速的设计优化流程,该流程结合了关联感知的Kriging元模型和对其进行操作的模拟退火算法。基于kriging的方法生成了考虑设计参数和工艺参数相关性影响的箝位线感测电路元模型。采用模拟退火优化算法,通过Kriging元模型对电路进行优化。结果表明,Kriging元模型具有较好的精度和较低的误差。优化算法找到了一个优化的预充电时间,同时保持功耗作为约束,平均执行时间为2.78 ms,而详尽搜索设计空间需要45分钟,即快了近106倍。据作者所知,这是第一篇使用克里格和模拟退火进行纳米cmos设计的论文。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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