Subnanosecond Optoelectronic Switch

2007 Siberian Conference on Control and Communications Pub Date : 2007-04-20 DOI:10.1109/SIBCON.2007.371332

L. Prudaev, M. Skakunov, O. Tolbanov

引用次数: 0

Abstract

New optoelectronic switching device was developed. Avalanche GaAs S-diode and light-emitting diode are integrated in the single crystal. It is presented main static characteristics of the device.

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亚纳秒光电开关

研制了新型光电开关器件。雪崩砷化镓二极管和发光二极管集成在单晶中。介绍了该装置的主要静态特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 Siberian Conference on Control and Communications

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