Yudong Zhang, W. Rhee, Zhihua Wang, Taeik Kim, Hojin Park
{"title":"A 0.55V 100MHz ADPLL with ΔΣ LDO and Relaxation DCO in 65nm CMOS","authors":"Yudong Zhang, W. Rhee, Zhihua Wang, Taeik Kim, Hojin Park","doi":"10.1109/RFIT.2015.7377930","DOIUrl":null,"url":null,"abstract":"A 0.55V 100MHz LDO-embedded ADPLL is implemented in 65nm CMOS. A digitally-controlled relaxation oscillator (DCRXO) with a variable-threshold inverter and a digital calibration circuit is designed for robust start up under ultra-low supply voltage. A ΔΣ modulated pseudo-digital LDO provides a PVT-insensitive dithered internal voltage for the DCRXO. The 100MHz ADPLL including the LDO consumes a 67μW from a 0.55V supply and achieves the phase noise of -82.9dBc/Hz at 1MHz offset frequency. The LDO achieves >20dB PSRR when sinusoidal noise is injected to the supply.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1997 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A 0.55V 100MHz LDO-embedded ADPLL is implemented in 65nm CMOS. A digitally-controlled relaxation oscillator (DCRXO) with a variable-threshold inverter and a digital calibration circuit is designed for robust start up under ultra-low supply voltage. A ΔΣ modulated pseudo-digital LDO provides a PVT-insensitive dithered internal voltage for the DCRXO. The 100MHz ADPLL including the LDO consumes a 67μW from a 0.55V supply and achieves the phase noise of -82.9dBc/Hz at 1MHz offset frequency. The LDO achieves >20dB PSRR when sinusoidal noise is injected to the supply.