Improved crystallization temperature and interfacial properties of HfO/sub 2/ gate dielectrics by adding Ta/sub 2/O/sub 5/ with TaN metal gate

Abstract

This paper presents high-k value Ta/sub 2/O/sub 5/ incorporated into the HfO/sub 2/ film to improved crystallization temperature and interfacial properties. Here we reported the (HfO/sub 2/)/sub 0.57/(Ta/sub 2/O/sub 5/)/sub 0.43/ MOSFET with TaN metal gate.