Investigation of the Characteristics of High-Frequency Transistor Autogenerators

Abstract

The characteristics of high-frequency oscillators on different transistors are investigated. The influence of transistor noise on AG fluctuations is considered. It is noted that in generators with a smaller nonisochronicity and with smaller cut-off angles of the current of the transistor, the fluctuations of self-oscillations are significantly lower. Formulated recommendations on the choice of transistors and their mode of operation for the construction of low-noise oscillators.