Regenerative Frequency Divider SiGe-RFIC with Octave Bandwidth and Low Phase Noise

T. Wallin, J. Hellén, H. Berg, S.-E. Elfgren
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引用次数: 2

Abstract

Using traditional RFIC design architecture a broadband regenerative frequency divider is designed. By integrating the frequency divider in a single IC the size is reduced and the bandwidth is increased without compromising the phase noise performance. A one octave bandwidth, 3.2-6.4 GHz, is achieved with a phase noise floor below -157 dBc/Hz. For a narrower frequency band, 4.0-5.6 GHz, a phase noise floor below -167 dBc/Hz is measured. This is directly comparable to regenerative frequency dividers designed using conventional discrete components or commercially available dividers. At the same time the bandwidth is exceeded only by digital dividers, they however have a typical phase noise floor of -150 dBc/Hz at these frequencies. Both f0/2 and 3f0/2 are available at the output while the input frequency, f0, is suppressed to at least -20 dBc. The IC is manufactured by austriamicrosystems in their 0.35 mum SiGe-BiCMOS process with an fT of 70 GHz and is packaged in a 5times5 mm QFN plastic package.
具有倍频宽和低相位噪声的可再生分频器SiGe-RFIC
采用传统的RFIC设计架构,设计了宽带再生分频器。通过将分频器集成在单个IC中,可以减小尺寸并增加带宽,而不会影响相位噪声性能。在相位本底噪声低于-157 dBc/Hz的情况下,实现了一个倍频程带宽3.2-6.4 GHz。对于较窄的频段(4.0-5.6 GHz),测量到的相位本底噪声低于-167 dBc/Hz。这直接可与使用传统分立元件或市售分压器设计的再生分频器相媲美。与此同时,只有数字分频器超过了带宽,但是在这些频率下,它们的典型相位本底噪声为-150 dBc/Hz。f0/2和3f0/2在输出端都可用,而输入频率f0被抑制到至少-20 dBc。该IC由奥地利微系统公司采用0.35 μ m SiGe-BiCMOS工艺制造,fT为70 GHz,封装在5倍5毫米QFN塑料封装中。
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