{"title":"Thermally stable 50 Gb/s SOI DPSK demodulator","authors":"M. S. Hai, O. Liboiron-Ladouceur","doi":"10.1109/PHO.2011.6110565","DOIUrl":null,"url":null,"abstract":"A fabricated 50 Gb/s silicon-on-insulator (SOI) Mach-Zehnder demodulator exhibits over 90 % improvement in thermal stability with 0.05 nm/°C of its spectral profile compared to 0.9 nm/°C for a non-compensated demodulators.","PeriodicalId":173679,"journal":{"name":"IEEE Photonic Society 24th Annual Meeting","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonic Society 24th Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHO.2011.6110565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A fabricated 50 Gb/s silicon-on-insulator (SOI) Mach-Zehnder demodulator exhibits over 90 % improvement in thermal stability with 0.05 nm/°C of its spectral profile compared to 0.9 nm/°C for a non-compensated demodulators.
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