Size and shape dependence of the lowest conduction band states in GaAs quantum dots

Zhao Guo-nian, Xian-yu Hai-qing, Song Jian, Li Xiao-bai, Ren Shang-yuan
{"title":"Size and shape dependence of the lowest conduction band states in GaAs quantum dots","authors":"Zhao Guo-nian, Xian-yu Hai-qing, Song Jian, Li Xiao-bai, Ren Shang-yuan","doi":"10.1088/1004-423X/8/11/008","DOIUrl":null,"url":null,"abstract":"Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of direct/indirect transition in GaAs quantum wires and thin films.","PeriodicalId":188146,"journal":{"name":"Acta Physica Sinica (overseas Edition)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Physica Sinica (overseas Edition)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1004-423X/8/11/008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of direct/indirect transition in GaAs quantum wires and thin films.
GaAs量子点最低导带态的尺寸和形状依赖性
利用最近开发的新方案,我们研究了不同形状和尺寸的长方体GaAs量子点在4 ~ 120a (a为晶格常数)范围内最低导带态的电子结构。GaAs长方体量子点直接/间接交叉的临界边长取决于量子点的大小和形状。作为推论,我们还讨论了砷化镓量子线和薄膜中直接/间接跃迁的临界尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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