Lens-integrated THz imaging arrays in 65nm CMOS technologies

2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI:10.1109/RFIC.2011.5940670

H. Sherry, R. Al Hadi, J. Grzyb, E. Ojefors, A. Cathelin, A. Kaiser, U. Pfeiffer

引用次数: 74

Abstract

THz CMOS imagers integrated with hyperhemispherical Si-lenses are presented and characterized. FPAs are implemented in 65nm CMOS bulk and SOI technologies. Lens-integrated detectors at 0.65 THz show an increase of 15dB and 20dB in SNR compared to front-side illumination for SOI and bulk respectively. The responsivities Rv are increased and a minimum noise-equivalent power NEP of 17pW/√Hz is measured for SOI detectors with the lens. THz Images are presented.

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采用65nm CMOS技术的透镜集成太赫兹成像阵列

介绍了集成超半球面硅透镜的太赫兹CMOS成像仪，并对其进行了表征。fpa采用65nm CMOS体和SOI技术实现。在0.65 THz下，透镜集成探测器的信噪比比SOI和bulk的正面照明分别提高了15dB和20dB。该透镜提高了SOI探测器的响应率Rv，测量到最小噪声等效功率NEP为17pW/√Hz。给出了太赫兹图像。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 IEEE Radio Frequency Integrated Circuits Symposium

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