Analysis of GaN MagFETs compatible with RF power technology

Abstract

The three-dimensional simulations, calibration, measured currents and calculated relative sensitivities of the first-ever fabricated double-drain gallium nitride (GaN) magnetic field effect transistor (MagFET) are given in this work. The MagFETs are GaN high electron mobility transistors (HEMTs) capable of operating under harsh environments. Geometrical and operational analysis are carried out on MagFETs using commercial simulation software Silvaco. The analysis shows promising relative sensitivities of 6.84%T−1 and 5.04%T−1 at ambient temperatures of 400 K and 500 K, respectively. In addition, the relative sensitivity of fabricated device is improved from 12%T−1 to 24%T−1 at 300 K by optimising device geometrical parameters.