I K Kurdish, V L Bikhunov, E A Tsimberg, S V El'chits, E L Vygovskaia, A A Chuĭko
{"title":"[The effect of dispersed silicon dioxide--aerosil A-300--on the growth of Saccharomyces cerevisiae yeasts].","authors":"I K Kurdish, V L Bikhunov, E A Tsimberg, S V El'chits, E L Vygovskaia, A A Chuĭko","doi":"","DOIUrl":null,"url":null,"abstract":"<p><p>High-dispersed silicon dioxide--aerosil A-300 has been studied for its effect on the growth of yeast Saccharomyces cerevisiae. It is shown that at heterophase cultivation of these microorganisms under periodical conditions introduction of aerosil A-300 induces a decrease of the lag phase duration and an increase of the maximum specific growth rate and economic coefficient of the carbon substrate utilization. This high-dispersed material has exerted the similar effect under the conditions of chemostatic cultivation. Optimal parameters of this process are determined.</p>","PeriodicalId":76162,"journal":{"name":"Mikrobiologicheskii zhurnal","volume":"53 2","pages":"41-4"},"PeriodicalIF":0.0000,"publicationDate":"1991-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mikrobiologicheskii zhurnal","FirstCategoryId":"1085","ListUrlMain":"","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High-dispersed silicon dioxide--aerosil A-300 has been studied for its effect on the growth of yeast Saccharomyces cerevisiae. It is shown that at heterophase cultivation of these microorganisms under periodical conditions introduction of aerosil A-300 induces a decrease of the lag phase duration and an increase of the maximum specific growth rate and economic coefficient of the carbon substrate utilization. This high-dispersed material has exerted the similar effect under the conditions of chemostatic cultivation. Optimal parameters of this process are determined.