Estimation of channel state information for non-volatile flash memories

Abstract

Error correction coding based on soft-input decoding can significantly improve the reliability of flash memories. Such soft-input decoding algorithms require reliability information about the state of the memory cell. This work proposes a channel model for soft-input decoding that considers the asymmetric error characteristic of multi-level cell (MLC) and triple-level cell (TLC) memories. Based on this model, an estimation method for the channel state information is devised which avoids additional pilot data for channel estimation. Furthermore, the proposed method supports page-wise read operations.