The Effect of Doping and Temperature on DC Characteristics of InGaP/InGaAs/GaAs HEMT

Abstract

Dual-Channel HEMTs (DCHEMT) with multi-coupled delta-doped sheets can provide greater mobility, better sheet carrier density, and higher current driving capabilities. These DCHEMTs using compound materials such as InGaP/ InGaAs/ GaAs has the potential to provide broad microwave operation when associated with multi-delta doped sheets. This motivates the authors to propose and investigate one such dual-channel HEMT using the versatility of InGaP/InGaAs/ GaAs compound materials with graded triple delta-doped sheets. The microwave and Dual Channel (DC) characteristics are studied and compared based on the InGaP Schottky barrier layer and the triple delta-doped sheets using different doping densities. Results show a higher driving current with an increase in doping profile when the proposed structure is simulated using a 2-D ATLAS simulator from SILVACO.