An Improved EM-Based Design Procedure for Single-Layer Substrate Integrated Waveguide Interconnects with Microstrip Transitions

J. Rayas-Sánchez
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引用次数: 19

Abstract

A practical, computationally efficient technique to EM-based design of single-layer SIW interconnects with microstrip transitions is presented in this work. The design technique efficiently exploits a simplified EM model of the SIW interconnect (surrogate model). The initial design of the SIW structure is obtained by using available empirical equations. A low-resolution EM model with solid walls (grooves) is proposed as an efficient SIW surrogate model for direct EM optimization using a few frequency points. The complete EM optimization of the surrogate model consumes much less time (≪ 20%) than just one simulation of the original EM model (with vias) using a high-resolution grid. The proposed practical technique is illustrated by designing a 10-50 GHz SIW interconnect with microstrip transitions on a standard FR4-based substrate.
一种改进的微带跃迁单层基板集成波导互连设计方法
本文提出了一种实用的、计算效率高的基于电磁的微带转换单层SIW互连设计技术。该设计技术有效地利用了SIW互连的简化的电磁模型(代理模型)。利用现有的经验方程,得到了SIW结构的初始设计。提出了一种具有实体壁(沟槽)的低分辨率电磁模型,作为利用少量频率点直接进行电磁优化的有效的SIW替代模型。与使用高分辨率网格对原始电磁模型(带过孔)进行一次模拟相比,替代模型的完整电磁优化所需的时间(≪20%)要少得多。通过在标准fr4基板上设计一个10-50 GHz的微带转换SIW互连来说明所提出的实用技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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