Modeling of memristor-based RF switches

Abstract

The enticing properties of memristors have been exploited for the design of novel circuits with great prospects, owing to the visible challenges posed by CMOS technology. Similarly, research efforts in the field of RF engineering over the last few years have focused on replacing MEMS with memristive switches. These switches have been recently investigated, fabricated, and characterized, demonstrating promising operational characteristics under high-frequency stimuli. In this work, a widely employed memristor model has been used to accurately fit the physical characteristics of the devices under investigation, including geometry and material composition. Subsequently, three common circuit topologies are adopted, studied, and simulated to extract the S-Parameters of the memristor-based switches matched to 50Ω load terminations. Our findings ensure sufficient functionality of the examined memristor-based switches up to FMAX=50GHz and suggest promising perspectives, slightly exceeding the projected results in previous studies found in the literature. Finally, a method for further enhancing the proposed circuit, in terms of increasing the power handling capability of the designed switches, is also proposed.