High Performance CsPbI3 NCs Decorated Few-layer WS2 Hybrid Photodetectors

Abstract

A promising device architecture that can achieve high response in photodetector devices can be consists of an effective semiconductor layer with high carrier mobility and highly photoabsorbing material. Here, we report a superior broadband visible photodetector with a few-layer tungsten disulfide (WS2) decorated with cesium lead iodide (CsPbI3) nano-crystals (NCs) in hybrid heterojunctions. An enhancement in photocurrent is demonstrated in the CsPbI3 NCs decorated WS2 0D/2D hybrid nanostructure compared to pristine WS2, revealing the potential of hybrid systems in next generation optoelectronic devices.