A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver

1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI:10.1109/DRC.1995.496275

P. Fay, W. Wohlmuth, C. Caneau, I. Adesida

引用次数: 0

Abstract

We report an advance in photoreceiver performance achieved by utilizing very high-performance quarter-micron lattice-matched high-electron mobility transistors (HEMTs) and metal-semiconductor-metal (MSM) photodetectors in the design of a 1.55 /spl mu/m sensitive high-speed, monolithically integrated lightwave receiver.

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一种15ghz带宽的晶格匹配InAlAs/InGaAs/InP hemt OEIC光电接收器

我们报告了利用非常高性能的四分之一微米晶格匹配高电子迁移率晶体管(hemt)和金属-半导体-金属(MSM)光电探测器设计1.55 /spl mu/m灵敏度高速单片集成光波接收器，实现了光接收器性能的进步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 53rd Annual Device Research Conference Digest

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