Scale length determination of Gate all around (regular pentagonal cross section) fully depleted junction less transistor

Abstract

This paper presents a method for scale length determination of a Gate all around (regular pentagonal cross section) fully depleted Junctionless transistor (JLT). The scale length expression is obtained by solving the 3D Poisson's equation. Variation of scale length with gate oxide thickness, side length of pentagon and dielectric constant is shown. The Transverse electrostatic potential profile is also shown for different values of gate voltage, gate oxide thickness, side length of pentagon, channel length and drain voltage. The Central electrostatic potential profile is also shown for different values of gate oxide thickness, side length of pentagon, gate voltage and drain voltage.