On-chip patch antenna on InP substrate for short-range wireless communication at 140 GHz

Yunfeng Dong, T. Johansen, V. Zhurbenko
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引用次数: 2

Abstract

This paper presents the design of an on-chip patch antenna on indium phosphide (InP) substrate for short-range wireless communication at 140 GHz. The antenna shows a simulated gain of 5.3 dBi with 23% bandwidth at 140 GHz and it can be used for either direct chip-to-chip communication or chip-level integration and packaging. In the transmission frequency band from 130 GHz to 150 GHz the estimated in-band gain variation is 0.5 dBi which guarantees gain uniformity. The antenna with optimized dimension is implemented for a transition between elevated coplanar waveguide (ECPW) and rectangular waveguide. The chip-to-waveguide transition in back-to-back configuration exhibits a simulated return loss of 10 dB and insertion loss of 3 dB from 128 GHz to 153 GHz. For higher directivity, a horn antenna is used together with the chip-to-waveguide transition forming an extended packaging structure that is suitable for the transceiver (Tx and Rx) chips. The simulated gain of the extended packaging structure is 11.9 dBi with 23% bandwidth at 140 GHz and the in-band gain variation is 2 dBi.
用于140 GHz短距离无线通信的InP衬底片上贴片天线
提出了一种用于140 GHz短距离无线通信的磷化铟衬底片上贴片天线的设计。该天线在140 GHz时的模拟增益为5.3 dBi,带宽为23%,可用于直接芯片对芯片通信或芯片级集成和封装。在130 GHz ~ 150 GHz传输频段内,估计带内增益变化为0.5 dBi,保证了增益均匀性。采用优化尺寸的天线实现了高架共面波导与矩形波导之间的过渡。在128ghz到153ghz的背对背结构中,芯片到波导的转换显示出10db的模拟回波损耗和3db的模拟插入损耗。为了获得更高的指向性,喇叭天线与芯片到波导的转换一起使用,形成适用于收发器(Tx和Rx)芯片的扩展封装结构。在140 GHz时,扩展封装结构的模拟增益为11.9 dBi,带宽为23%,带内增益变化为2 dBi。
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