Low-Power/Low-Voltage analog front-end for LF passive RFID tag systems

F. P. Cortes, Guilherme Freitas, Henrique Luiz Andrade Pimentel, J. P. M. Brito, F. Chávez
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引用次数: 5

Abstract

Radio Frequency Identification (RFID) systems are widely used in a variety of tracking, security and tagging applications. In this context, passive low-frequency (LF) RFID systems have a large installed base, mostly used for animal tagging and supply chain applications. This paper presents a Low-Power/Low-Voltage analog front-end architecture (AFE) for such RFID systems, discussing the design and technology issues related with standard deep-submicron CMOS processes. The AFE converts the incoming AC power (134.2kHz) into DC power (1.2V) and internal references (570mV and 5nA) using low power design techniques in order to increase overall performance. An improved rectifier structure was designed using a half-wave voltage doubler topology with self-bias feedback, providing efficient rectification. A shunt regulator stage was proposed as a fundamental part of the AFE architecture, since it keeps the rectified voltage at 3V and generates the signal for demodulation for all power levels and process variations. Finally, a low-power/low-voltage PMU architecture was designed, containing a new reference voltage approach based on two NMOS transistors with different Vt's consuming 170nA (startup circuit included); a 5nA reference current based in SCM (Self Cascode Mosfet) structures; and a dual-mode capacitor-less voltage regulator consuming 400nA. In order to increase the yield of the system, the VI reference block passed through a yield optimization using the tool WiCkeD, which showed a block yield increase of 71.66%.
低频无源RFID标签系统的低功耗/低压模拟前端
射频识别(RFID)系统广泛应用于各种跟踪、安全和标签应用。在这种情况下,无源低频(LF) RFID系统有很大的安装基础,主要用于动物标签和供应链应用。本文提出了一种用于此类RFID系统的低功耗/低电压模拟前端架构(AFE),讨论了与标准深亚微米CMOS工艺相关的设计和技术问题。AFE采用低功耗设计技术将输入的交流电源(134.2kHz)转换为直流电源(1.2V)和内部参考电源(570mV和5nA),以提高整体性能。采用带自偏置反馈的半波倍压拓扑,设计了一种改进的整流结构,实现了高效整流。并联稳压器级被提议作为AFE架构的基本部分,因为它保持整流电压为3V,并产生用于所有功率电平和过程变化的解调信号。最后,设计了一种低功耗/低压PMU架构,该架构包含一种新的参考电压方法,该方法基于两个Vt值不同的NMOS晶体管,消耗170nA(包括启动电路);基于单片机(自级联码Mosfet)结构的5nA参考电流;以及消耗400nA的双模无电容稳压器。为了提高体系的收率,利用WiCkeD工具对VI参考块进行了收率优化,块收率提高了71.66%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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