Statistical modeling of pseudomorphic HEMTs from automated noise and scattering parameter measurements

Abstract

A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using a computer-controlled noise figure measuring set-up only is presented. A modeling procedure exploiting both scattering and noise parameters has been employed to extract the equivalent circuit which gives the best fit of the experimental data. Results are reported concerning the complete characterization and modeling of a series of ten pseudomorphic HEMTs in the 8-16 GHz range.<>