Electrodeposition and dependency of optical properties on operating voltage and bath temperature of Copper oxide (II) thin films for photovoltaic applications

Sheikh Jaber Nurani, M. Islam, A. F. M. Moshiur Rahman, Md. Golam Mowla, K. Shorowordi
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引用次数: 1

Abstract

In our current research, thin films of Copper oxide (CuO) were deposited on copper plate in an electrolytic bath containing CuSO4.5H2O, 3M lactic acid and NaOH by electrodeposition process. CuO thin films were electrodeposited at different voltage and different temperature whereas bath concentration, pH and time were kept constant. The characterization of the CuO thin films deposited at different electrodeposition conditions were conducted by Scanning Electron Microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS). The SEM study showed the grain sizes of CuO thin films decreased at more negative potentials. Film thickness with regards to voltage and temperature are analysed. Absorption spectrum was obtained from UV-Vis absorption spectroscopy. Subsequently, the optical band gap was determined from their absorption spectrum by using Tauc's equation. It was found that CuO thin films deposited at low voltage have lower band gap than that of films deposited at higher voltage due to crystalline, uniform and compact grains. The band gap decreases with increasing operating temperature.
光电用氧化铜(II)薄膜的电沉积及其光学性能对工作电压和镀液温度的影响
本研究在含有CuSO4.5H2O、3M乳酸和NaOH的电解液中,采用电沉积工艺在铜板上沉积CuO薄膜。在电解液浓度、pH和时间不变的情况下,在不同电压和温度下电沉积CuO薄膜。采用扫描电子显微镜(SEM)、能谱仪(EDS)对不同电沉积条件下沉积的CuO薄膜进行了表征。SEM研究表明,CuO薄膜在负电位下晶粒尺寸减小。分析了薄膜厚度与电压和温度的关系。利用紫外-可见吸收光谱法得到吸收光谱。然后,利用Tauc方程从它们的吸收光谱中确定了光学带隙。结果表明,低电压下沉积的CuO薄膜的带隙比高电压下沉积的薄膜小。带隙随工作温度的升高而减小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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