Record-low 10mΩ SiC MOSFETs in TO-247, rated at 900V

Abstract

We demonstrate a 900V SiC MOSFET with a record-low ON resistance of 10 mΩ in a TO-247 package. Due to their record low specific ON resistance, and a low Rds,On temperature coefficient, 900V SiC MOSFETs can far exceed the current densities of IGBTs in discrete packages. SiC MOSFETs also have a robust, low reverse recovery body diode which makes them suited to hard-switched and soft-switched topologies with bi-directional conduction. They can also achieve superior light load efficiencies due to knee-less conduction in both 1st and 3rd quadrant, low switching losses and low body diode reverse recovery losses.