Advances in the pseudo-MOSFET characterization method

Abstract

Silicon-on-Insulator wafers with two probe contacts on the top silicon film act as MOS transistors. This configuration called pseudo-MOSFET is largely used for characterization of material parameters such as mobility of carriers and interface quality. Thinner films or oxides induce stronger electrostatic coupling of surface and interface with the channel. We discuss new developments in the pseudo-MOSFET measurement related to the influence of these phenomena as well as the quality of the contacts on the film. Moreover the pseudo-MOS transistor proves to be highly sensitive to its free surface which opens the road to applications in the sensing field.