Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering

F. Jiang, Yu Chen, Chuanxing Zhu, M. Jiang, F. Gan
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Abstract

A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.
溅射制备GeTe-Sb2Te3体系薄膜的静态和光学性能
采用共溅射法制备了一系列具有良好写/擦除性能的Ge-Sb-Te体系薄膜。在75至约200ns脉冲宽度范围内,写入和擦除功率分别为15至约22mw和6至约10mw。在这些条件下,在上述系统中的一些薄膜样品中获得了高达105的高写/擦除周期。根据红外光谱和薄膜厚度计算了折射率。利用具有合适折射率和膜厚的可擦除相变材料,可以设计出具有最佳记录性能的多层薄膜。
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