A 2.5 dB low noise 6 to 18 GHz HEMT MMIC amplifier

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185987

J. Panelli, N. Chiang, W. Ou, R. Chan, C. Shih, Y. Pao, J. Archer

引用次数: 3

Abstract

A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<>

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一个2.5 dB低噪声6至18 GHz HEMT MMIC放大器

设计、制作并测试了一种两级、6- 18ghz、15.0 db增益的单片砷化镓高电子迁移率晶体管(HEMT)低噪声放大器(LNA)。测量的典型噪声系数为2.5 dB，输出功率为5 dBm。该MMIC放大器在2 V和20 mA的直流功耗下表现出优异的性能。这一性能是使用生产0.25 μ m的标准HEMT技术实现的，没有蘑菇门。低直流功耗，低噪声系数和高增益使该器件非常适合前端接收器应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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