A Novel scaling theory for Single Gate AlInSb/InSb High Electron Mobility Transistors

Abstract

A Novel scaling theory for Single Gate AlInSb/InSb High Electron Mobility Transistors (HEMTs)is derived by solving the 2D Poisson equation. To combat with the issues introduced by device scaling,Effective Conductive Path Effect (ECPE) has been taken into account.From literature, scaling Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)with ECPE has shown stronger immunity towards short channel effects (SCEs). Hence, on introducing the ECPE in HEMT, a simple scaling equation has been derived and on solving this equation the minimum channel potential Φdeff,min and the new scaling factor α is obtained to model the subthreshold behavior of high electron mobility transistors. The analytical model has been further extended in finding the various device parameters. Then simulations of the proposed work are performed using 2D TCAD sentaurus device simulator. The analytical results are compared and verified with the TCAD simulation results. Finally, results of the proposed work are compared with the scaling theory for MOSFETs with ECPE.