Invited talk: Resistive random access memory (RRAM): Materials and devices

Abstract

Summary form only given. Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory demonstrations. Recently improved understanding of the resistance switching effects has led to improved device performance. However, challenges such as the tradeoff between programming current and retention still need to be overcome. Another major challenge for RRAM is the “sneak path” problem in the interconnected passive network, and proper “select” elements need to be developed to break the parasitic paths. Effective 3D integration techniques also need to be demonstrated. Different approaches to address these problems will be discussed.