2.5 Gb/s 8/spl times/8 self-routing switch GaAs LSIs for ATM switching systems

Abstract

2.5 Gb/s 8/spl times/8 self-routing switch LSIs have been developed for the asynchronous transfer mode (ATM) switching systems. The basic architecture of this switch is a Batcher-Banyan network. This switching system consists of three LSIs using a 0.5 /spl mu/m gate GaAs MESFET technology. These LSIs are a switching network LSI for exchanging packet cells, a "NEMAWASHI" network LSI for previously detecting the cells with the same output port address, and a demultiplexer LSI for converting the cells from the switching network into the eight streams per a channel. These LSIs are mounted in a 520 pin multi-chip module package. The number of total logic gates is 13.3 k, and the power dissipation is 24 W. The switching system fully operates at a data rate of 2.6 Gb/s, and the throughput is 20.8 Gb/s.