Comparison between observed and theoretically determined SEU rates in the TEXAS TMS4416 DRAMs on-board the UoSAT-2 micro-satellite

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698984

M. Oldfield, C. Underwood

引用次数: 5

Abstract

A single event upset (SEU) prediction tool, PRISM (Protons In Semi-conductor Materials) has been used to model the proton induced upset rate in Texas TMS4416 DRAMs on-board the UoSAT-2 micro-satellite. Good agreement is found between the observed and theoretically determined SEU and MBU (multiple-bit upset) rates for this device.

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UoSAT-2微型卫星上的德克萨斯TMS4416 dram中观测到的和理论确定的SEU率的比较

利用单事件扰动(SEU)预测工具PRISM(质子在半导体材料)对UoSAT-2微型卫星上的德州TMS4416 dram的质子诱导扰动率进行了模拟。该器件的SEU和MBU(多比特扰流)速率与观测值和理论值吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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