{"title":"Design and technology of a scintillating fiber sensor with silicon avalanche photodiode","authors":"J. Bar, E. Dobosz, I. Węgrzecka, M. Węgrzecki","doi":"10.1117/12.435926","DOIUrl":null,"url":null,"abstract":"The results of work on design and technology of a novel fiber-optic sensor are presented. It contains an avalanche photodiode of the 1.55 mm diameter active area coupled with a scintillating plastic fiber of the 1 mm diameter. This fiber emits the light of 530 nm wavelength as a result of interaction with ionizing particles. The developed technique of assembling not only have ensured high optical coupling between the fiber and photodiode structure but also secured total isolation of the photodiode against background radiation. The described sensor design ensures better isolation of an avalanche photodiode structure against nuclear radiation than the sensor with scintillating wafer directly attached to the active surface of the structure.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"86 11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optoelectronic and Electronic Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.435926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The results of work on design and technology of a novel fiber-optic sensor are presented. It contains an avalanche photodiode of the 1.55 mm diameter active area coupled with a scintillating plastic fiber of the 1 mm diameter. This fiber emits the light of 530 nm wavelength as a result of interaction with ionizing particles. The developed technique of assembling not only have ensured high optical coupling between the fiber and photodiode structure but also secured total isolation of the photodiode against background radiation. The described sensor design ensures better isolation of an avalanche photodiode structure against nuclear radiation than the sensor with scintillating wafer directly attached to the active surface of the structure.