Smoothing gate capacitance models for CMOS radio frequency and microwave integrated circuits CAD

Abstract

Convergence problems for both voltage- and charge-controlled models of MOSFET gate capacitances are often a limiting factor of CAD tools. In paper, an idea of exponential smoothing of model discontinuities is proposed. The method is demonstrated by smoothing the discontinuity of Meyer's model at zero drain-source voltage. The updated model is tested on flip-flop circuit by an advanced algorithm.