Growth of n-doped GaAs nanowires by Au-assisted metalorganic chemical vapor deposition: effect of flux rates of n-type dopants

Jing-Wei Guo, Hui Huang, Minjia Liu, X. Ren, Shiwei Cai, Wen Wang, Qi Wang, Yongqing Huang, Xia Zhang
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引用次数: 1

Abstract

N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS) mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without any stacking faults from bottom to top for all three samples were achieved.
金辅助金属有机化学气相沉积法生长n掺杂砷化镓纳米线:n型掺杂剂通量速率的影响
在金属有机化学气相沉积(MOCVD)体系中,采用气相-液-固(VLS)机制在GaAs (111) B衬底上生长n掺杂GaAs纳米线。研究了用于GaAs NWs生长的n型掺杂剂的两种通量速率。为了比较,在相同的条件下生长未掺杂的GaAs NWs。研究发现,所有的NWs都与基底垂直,没有横向生长。生长速率与n掺杂剂的通量速率成正比。观察到掺杂的NWs存在吉布斯-汤姆逊效应。三种样品均获得了从下到上无层错的纯闪锌矿结构。
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