J. Moers, N. P. Stcpina, S. Trellenkamp, D. Grutzmacher
{"title":"Templates for highly ordered SiGe-QD arrays for single photon detection","authors":"J. Moers, N. P. Stcpina, S. Trellenkamp, D. Grutzmacher","doi":"10.1109/ASDAM.2014.6998697","DOIUrl":null,"url":null,"abstract":"Two and three dimensional SiGe-QD-arrays can be regarded as a test-system for artificial crystals, as they also can be utilized as single photon detectors. While arrays with randomly distributed SiGe-QD can easily be grown on plain silicon surfaces, the fabrication of ordered arrays with pitches done to a few 10 nm is challenging: to facilitate Template Assisted Self Assembled growth of SiGe-QD in MBE, ordered arrays of seed holes have to be etched into the silicon substrate. EUV-interference lithography can be employed, but here no spatial relation to previous or later process steps is possible. In this work contrast and resolution of ZEP 520A-7 is investigated in terms of development temperature, duration and acceleration voltage during e-beam exposure to obtain laterally ordered well localized SiGe-QD-arrays. By increasing acceleration voltage from 50 kV to 100 kV contrast can be improved by a factor of 1.9, shifting the resolution from 40 nm pitch seed hole arrays etched in silicon to 30 nm.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Two and three dimensional SiGe-QD-arrays can be regarded as a test-system for artificial crystals, as they also can be utilized as single photon detectors. While arrays with randomly distributed SiGe-QD can easily be grown on plain silicon surfaces, the fabrication of ordered arrays with pitches done to a few 10 nm is challenging: to facilitate Template Assisted Self Assembled growth of SiGe-QD in MBE, ordered arrays of seed holes have to be etched into the silicon substrate. EUV-interference lithography can be employed, but here no spatial relation to previous or later process steps is possible. In this work contrast and resolution of ZEP 520A-7 is investigated in terms of development temperature, duration and acceleration voltage during e-beam exposure to obtain laterally ordered well localized SiGe-QD-arrays. By increasing acceleration voltage from 50 kV to 100 kV contrast can be improved by a factor of 1.9, shifting the resolution from 40 nm pitch seed hole arrays etched in silicon to 30 nm.